features 1 of 9 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt sgl0163z 100mhz to 1300mhz silicon germanium cascadable low noise amplifier the sgl0163z is a high performance sige hbt mmic low noise amplifier featuring one-micron emitters with ft up to 50ghz. this device has an internal temperature compensation ci rcuit permitting operation directly from supply voltages as low as 2.5v. the sgl0163z has been character- ized at v d =3v for low power and 4v for medium power applications. only two dc-blocking capacitors, a bias resi stor, and an optional rf choke are required for operation from 800mhz to 1300mhz. rf in rf out / v s v s temperature compensation circuit ? internally matched to 50 ? 800mhz to 1300mhz ? high input/output intercept ? low noise figure: 1.2db typ. at 900mhz ? low power consumption ? single voltage supply opera- tion ? internal temperature com- pensation applications ? receivers, gps, rfid ? cellular, fixed wireless, land mobile ds111011 ? package: sot-363 sgl0163z 100 mhz to 1300mhz sili- con germa- nium cascadable low noise amplifier parameter specification (v s =3v) specification (v s =4v) unit condition min. typ. max. min. typ. max. small signal gain 15.7 16.6 db 800mhz 14.0 15.5 17.0 15.8 db 900mhz 14.1 15.0 db 1000 mhz output power at 1db compres- sion 4.4 9.9 dbm 800mhz 3.2 5.2 10.1 dbm 900mhz 5.6 10.5 dbm 1000mhz input third order intercept point tone spacing = 1 mhz p out per tone=-13dbm 5.3 12.1 dbm 800mhz 5.0 7.0 13.4 dbm 900mhz 9.0 14.8 dbm 1000mhz noise figure 1.1 1.6 db 800mhz, z s =50 ? 1.2 1.7 1.7 db 900mhz, z s =50 ? 1.2 1.7 db 1000mhz, z s =50 ? input return loss 10.0 12.5 15.7 db 900mhz output return loss 11.5 15.6 17.6 db 900mhz reverse isolation 20.9 20.9 db 900mhz device current 9.5 12.0 14.0 23 ma thermal resistance 255 c/w test conditions: 800mhz to 1300 application circuit, t lead =25c, z 0 =z l =50 ?
2 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z absolute maximum ratings parameter rating unit max device current (i d )45ma max device voltage (v s )5v max rf input power +10 dbm max junction temp (t j )+150c operating temp range (t lead ) -40 to +85 c max storage temp +150 c esd rating - human body model (hbm) 1a class moisture sensitivity level 1 msl operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d <(t j -t l )/r th , j-l caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder. device voltage (v d ) vs. device current (i d ) over temperature load lines for v s = +5 volts, r b2 = 43 w and 180 w 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 611162126 i d (ma) v d (volts) -40c +25c +85c v s = +5 v, r b2 = 43 w v s = +5 v, r b2 = 180 w
3 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z sgl-0163 noise figure 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 freq. (mhz) nf (db) +3v +4v p1db vs frequency 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 freq. (mhz) p1db (dbm) +3v +4v input ip3 vs frequency 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 freq. (mhz) input ip3 (dbm) +3v +4v output ip3 vs frequency 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 freq. (mhz) output ip3 (dbm) +3v +4v typical rf performance at v s = 3 v and 4 v -- 800-1300 mhz evaluation board -- t lead =+25 c
4 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z 10 12 14 16 18 20 800 900 1000 1100 1200 1300 frequency (mhz) s 21 (db) | s 11 | vs. frequency | s 21 | vs. frequency | s 12 | vs. frequency | s 22 | vs. frequency -25 -23 -21 -19 -17 -15 800 900 1000 1100 1200 1300 frequency (mhz) s 12 (db) -20 -18 -16 -14 -12 -10 800 900 1000 1100 1200 1300 frequency (mhz) s 11 (db) -30 -26 -22 -18 -14 -10 800 900 1000 1100 1200 1300 frequency (mhz) s 22 (db) 10 12 14 16 18 20 800 900 1000 1100 1200 1300 frequency (mhz) s 21 (db) | s 11 | vs. frequency | s 21 | vs. frequency | s 12 | vs. frequency | s 22 | vs. frequency -25 -23 -21 -19 -17 -15 800 900 1000 1100 1200 1300 frequency (mhz) s 12 (db) -20 -18 -16 -14 -12 -10 800 900 1000 1100 1200 1300 frequency (mhz) s 11 (db) -30 -26 -22 -18 -14 -10 800 900 1000 1100 1200 1300 frequency (mhz) s 22 (db) typical rf performance at v s = 3 v -- 800-1300 mhz evaluation board -- t lead =+25 c typical rf performance at v s = 4 v -- 800-1300 mhz evaluation board -- t lead =+25 c
5 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z gain vs. frequency @ t lead =+25c 400-500 mhz series l application circuit 14 15 16 17 18 19 20 21 22 23 24 400 410 420 430 440 450 460 470 480 490 500 frequency(mhz) gain (db) vs=3v, id=11ma vs=4v, id=23ma gain vs. frequency @ t lead =+25c 400-500 mhz series l application circuit -20 -16 -12 -8 -4 0 400 410 420 430 440 450 460 470 480 490 500 frequency(mhz) gain (db) irl, vs=3v irl, vs=4v orl, vs=3v orl, vs=4v rf performance - 400-500mhz series l application circuit freq gain (db) p1db (dbm) iip3 (dbm) oip3 (dbm) nf (db) 400 mhz 22.0 4.4 1.3 23.1 1.1 450 mhz 21.3 5.0 3.2 24.7 1.3 500 mhz 20.6 5.7 4.1 24.7 1.3 freq gain (db) p1db (dbm) iip3 (dbm) oip3 (dbm) nf (db) 400 mhz 23.1 10.9 6.5 29.6 2.0 450 mhz 22.2 11.4 8.1 30.3 2.1 500 mhz 21.2 12.0 7.8 28.9 2.1 v s =3v, i d =11ma (typ.) v s =4v, i d =24ma (typ.) rf performance - 100-800 mhz rc feedback application circuit return loss vs. frequency @ t lead =+25c 100-800 mhz feedback application circuit -30 -25 -20 -15 -10 -5 0 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 frequency(mhz) return loss (db) irl, vs=3v irl, vs=4v orl, vs=3v orl, vs=4v gain vs. frequency @ t lead =+25c 100-800 mhz feedback application circuit 14 16 18 20 22 24 26 28 30 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 frequency(mhz) gain (db) vs=3v, id=11ma vs=4v, id=23ma freq gain ( db ) p1db ( dbm ) iip3 ( dbm ) oip3 ( dbm ) nf ( db ) 100 mh z 23.9 3.5 -6.8 17.1 1.4 300 mhz 21.4 3.4 -2.5 18.9 1.2 500 mhz 18.7 3.5 0.1 18.8 1.2 800 mhz 15.2 3.7 4.3 19.5 1.2 freq gain ( db ) p1db ( dbm ) iip3 ( dbm ) oip3 ( dbm ) nf ( db ) 100 mh z 26.3 9.2 -4.1 22.2 2.2 300 mhz 23.0 9.8 2.2 25.1 1.9 500 mhz 19.8 9.9 5.2 25.0 1.7 800 mhz 16.1 10.0 9.7 25.8 1.7 v s =3v, i d =11ma (typ.) v s =4v, i d =23ma (typ.)
6 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z 100mhz to 800mhz operation the useful range of the sgl0163z may be extended down to 100mhz using simple lumped element tuning. following are two examples: option 1: a series inductor introduced at the input and output optimizes rf performance over 100mhz wide bands. band cen- ter is selected by adjustment of the inductor values . the example is optimized for the 400mhz to 500mhz band. option 2: an rc feedback network provides broadband rf pe rformance from 100mhz to 800mhz. the resistor value may be adjusted to select a combination of gain/nf/return loss best suited to the particular application. data and schematics for these two options are presented below. contact rfmd technical support for further guidance. bill of materials for evaluation board, 100mhz to 800mhz notes: 1. circuit board dielectric material is getek, ml200c. 2. b1 and rb1 recommended for improved k- factor but are optional. replace with 0 ? resistor if not used. ref. designator description value manufacturer?s part number b1 2 ferrite bead 1500 ? at 100mhz murata electronics blm18he152sn1d cc1, cc2, cd1 capacitor, sm, 0603 0.1uf samsung cl10b103kbnc t/r cd2 capacitor, sm, 0603 22pf rohm mch185aa220djk rb1 2 resistor, sm, 0603 47 ? phillips 9c06031a47r0 jl hft rb2 resistor, sm, 0603 0 ? phillips 9c06031a0r00 jl hft n/a 1 circuit board n/a ecb101761 rev b ecb-101761 rev. b in eval board out vcc 1000pf 1000pf 470 nh rb1 b1 cd1 cd2 rb2 +vcc gnd 10pf 1500 ohms in eval board o u t vcc c c2 c c 1 22nh rb1 b1 cd1 cd2 rb2 + v cc gnd ecb-101761 rev. b 10nh 10nh sgl0163z sgl0163z
7 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z sot-363 pcb pad layout sot-363 nominal package dimensions dimensions in inches (millimeters) refer to drawing posted at www.rfmd.com for tolerances. pin names and description pin function description 1nc no electrical connection. provide an isolated (ungrounded) solder pad for mounting integrity. 2gnd connection to ground. provide via holes as close to the devi ce ground leads as possible to reduce ground inductance and achieve optimum rf performance. 3rf in rf input pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of operation. 4dc bias voltage supply connection. bypass with suitable capacitors. 5gnd connection to ground. provide via holes as close to the devi ce ground leads as possible to reduce ground inductance and achieve optimum rf performance. 6rf out/ bias rf output and voltage supply. dc voltage is present on this pin, therefore a dc blocking capacitor is necessary for proper operation. 0.026 0.075 0.016 0.035 pad layout notes: 1. provide a ground pad area under device pins 2 & 5 with plated via holes to the pcb ground plane. 2. we recommend 1 or 2 ounce copper. measure- ments for this data sheet were made on a 31 mil thick getek with 1 ounce copper on both sides.
8 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z 800mhz to 1300mhz application circuit evaluation board layout sgl0163z c b c d2 +v s l b r b1 (opt.) b1 (opt.) c d1 r b2 5 4 6 3 rf input c b rf output note: pin 1 must be electrically floating. do not connect to ground. provide an isolated solder pad for mounting integrity. application circuit element values reference designator value manufact urer & part no. l b 33 nh toko ll 1608-fsl33nj b1 1 1500 ohms @100 mhz fair-rite 2508051527y0 ferrite bead c b , c d1 0.1 uf samsung cl10b103kbnc c d2 22 pf rohm mch185aa220djk r b1 1 47 ohms phillips 9c06031a47r0 jl hft r b2 2 0 ohms phillips 9c06031a0r00 jl hft notes: 1. b1 and r b1 provide improved k-factor but are optional. 2. r b2 may be introduced as a voltage dropping resistor for use with supply voltages greater than the desired device bias voltage. note: circuit board dielectric material is getek, ml200c ecb-101761 rf in rf ou t rev b +v s gnd b 1 c b r b 2 l b c b c d1 c d2 r b 1 sgl0163z
9 of 9 ds111011 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . sgl0163z part identification marking ordering information part number description sgl0163z 7" reel with 3000 pieces sgl0163zsq sample bag with 25 pieces SGL0163ZSR 7" reel with 100 pieces sgl0163zpck1 800mhz to 1300mhz pcba with 5-piece sample bag 1 2 3 6 5 4
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